Samsung makes 'first' 1Gbit mobile DRAM
Posted : 04 Jan 2007
原文链接http://www.eetasia.com/ART_8800447869_499486_699bf675200701.HTM
三星推出业界“首款”1GB移动DRAM内存
发布时间：2007-1-4
Samsung Electronics Co. Ltd has developed what it touts as the industry's first 1Gbit mobile DRAM for mobile products, using 80nm process technology.
三星电子开发出号称业界首款的1GB移动DRAM内存。该产品采用80nm工艺制程，适用于移动产品。
This chip, also known as low-power DDR or synchronous DRAM, will be more cost effective than other high-density mobile solutions and used for a wide range of advanced handset applications as well as for digital still cameras, portable media players and portable gaming products, said Samsung.
三星宣称，该芯片也即大家所熟悉的低功耗DDR或同步DRAM，比其它高密度移动存储器成本功效更高，可适用于范围宽广的高端手机及数码相机、便携媒体播放器及便携游戏机。
Competitive choice
有竞争力的选择
The monolithic 1Gbit Mobile DRAM is a highly competitive choice for mobile applications over the double-die stack, 1Gbit memory solution widely used today, as the electric current in the new chip drops a full 30 percent.
由于新芯片的电路少了整整30%，在双裸片堆栈、1GB内存广泛使用的今天，单片式1GB移动DRAM内存在手机应用中更具竞争力。
This DRAM chip uses the same packaging technique as the 512Mbit double-die stack 1Gbit package, however, it introduces a new temperature-sensing feature. This new temperature-compensated, self-refresh feature maximizes the self-refresh cycle to reduce power drain in standby mode by 30 percent over conventional memory chip designs.
DRAM芯片采用与512MB双裸片堆栈1GB封装相同的封装技术，而新增了温度感测功能。这种新增的温度补偿、自动升级功能令自动升级周期最大化，且与传统存储芯片设计相比，标准模式下的功耗减少了30%。
Single, high-density package
单片式、高密度封装
Also offering a more compact form factor, the 1Gbit Mobile DRAM chip is at least 20 percent thinner than a multistack package of 512Mbit dies, allowing a single high-density package solution of 1.5Gbit or even 2Gbit Mobile DRAM memory, for which market demand is expected to grow this year. The 1Gbit mobile DRAM also can be combined with flash memory in multichip packaging including package-on-package designs.
在外形指标更紧凑的同时，1GB移动DRAM芯片比多堆栈封装的512MB裸片至少薄20%，从而可实现在高密度单芯片上封装1.5GB甚至2GB移动DRAM内存，而市场对1.5GB与2GB产品的需求预计今年会增长。1GB移动DRAM还将闪存结合入多芯片封装，包括封装上封装（package-on- package）设计。
Samsung plans to mass produce the new device beginning Q2 2007 at a time when demand for high-density 1Gbit mobile DRAM is expected to be very high.
三星计划从2007年第二季开始大批量生产该新款器件，预计此时市场对高密度1GB移动DRAM的需求极高。